saturation current
英 [ˌsætʃəˈreɪʃn ˈkʌrənt]
美 [ˌsætʃəˈreɪʃn ˈkɜːrənt]
网络 饱和电流; 飽和電流; 电流饱和值
双语例句
- Effect of CT transient saturation on transfer of sympathetic inrush Real-time Measuring Method for Transient Saturation of Current Transformer Based on Wavelet Transform in Busbar Protection
电流互感器暂态饱和对和应涌流传变的影响（英文）基于小波变换的母线保护CT暂态饱和实时检测方法 - Real-time Measuring Method for Transient Saturation of Current Transformer Based on Wavelet Transform in Busbar Protection Application of CT Scanning Image Technique to Study of Oil Saturation Distribution in Core Displacement Test
基于小波变换的母线保护CT暂态饱和实时检测方法应用CT成像技术研究岩心水驱含油饱和度分布特征 - A MPPT algorithm based on the research of diode factor and reverse saturation current
基于二极管品质因子和暗电流研究的MPPT算法 - Research of a New Type Permanent Magnet Magnetic Saturation Fault Current Limiter
一种新型永磁磁饱和式故障限流器的研究 - Second, the formation of the saturation current affected by the space charge effect and bunching effect is studied in details.
进而详细研究了在空间电荷效应作用及相聚过程共同作用下形成饱和电流的过程。 - The transient saturation of current transformer and its application calculation
电流互感器的暂态饱和及应用计算 - The Detecting Method of Saturation of Current Transformer and Its Application to Microcomputer Bus Protection
电流互感器饱和的检测方法及在微机母线保护中的应用 - Simulation and Study on the Saturation of Current Transformer to Its Transient State Influence
电流互感器的饱和对其暂态影响的仿真研究 - The second gate bias will remarkably affected saturation current and transconductance and realize power gain control.
研究表明，共栅共源器件的第二栅压对的器件饱和电流与跨导有明显的调制作用，容易实现功率增益控制。 - The calculated results also indicate that higher saturation current, transconductance, and cutoff frequency can be achieved by lowering the parasitic resistances.
降低寄生源漏电阻可以获得更高的饱和电流、跨导和截至频率。 - We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics.
根据肖特基势垒的反向IV曲线，计算了势垒的反向饱和电流密度和平均理想因子。 - The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。 - The saturation current is decreased due to diffuse term value of uneven-doped electric field.
梯度掺杂电场使饱和电流在原来扩散项外，增加了漂移项。漂移项和扩散项的方向相反，减小了饱和电流。 - The output power above 440 mW and the saturation current above 3 A have been achieved. The measured far-field divergence angle is 40 °× 14 °.
管芯功率达到440mW以上，饱和电流3A以上，峰值波长1430nm，远场发散角为40°×14°。 - Study on the transient magnetic saturation means of protection The transient saturation of current transformer and its application calculation
超声变压器瞬态磁饱和的研究电流互感器的暂态饱和及应用计算 - The plasma parameter profiles measured include electron temperature and density as well as their decay lengths, floating potential, space potential, saturation ion current and particle flux in a discharge with this system.
它在一次放电中能测量主等离子体边缘的温度、密度、悬浮电位、空间电位、离子饱和电流、极向电场、粒子通量等参数的径向分布以及电子温度和密度的衰减长度。 - The method has the characteristics of rapid act, simplification, reliability and nicety, and turns away the difficulty of estimating the occurring time of the saturation of current transformer.
该方法还具有动作速度快，简单可靠和准确的特点、并且还避免了判断电流互感器（TA）饱和时刻的难点。 - As a result, the NMOS and PMOS with elevated source/ drain structure increase the saturation current by 36% and 41%, respectively.
采用抬高源漏结构的NMOS和PMOS，其饱和电流分别提高了36%和41%。 - The saturation current of 1.2 μ m nMOSFETs is increased by 32% with elevated source/ drain structure, and that of 1.2 μ m pMOSFETs is increased by 24%.
采用抬高源漏结构的1.2μmnMOSFETs的饱和电流提高了32%，pMOSFETs的饱和电流提高了24%。 - The mal-operation of the transformer differential protection will occasionally take place after the removal of external faults. The physical phenomenon of partial transient saturation for current transformer was studied in this paper.
针对近年来相继出现的变压器差动保护在外部故障切除时发生误动的现象，研究了TA（电流互感器）局部暂态饱和的物理现象和TA局部暂态饱和的数学模型。 - Then different external time for current phase is gotten by the saturation of current and next phases.
然后采用第二级模糊控制器根据当前相位与下一相位的饱和度得出当前相位的绿灯延时。 - The decrease of Voc results from the decrease of parallel resistance ( R_ ( sh)) or the increase of dark saturation current ( I_S).
V（oc）的下降是由于并联电阻R（sh）的减小或暗饱和电流Is的增加造成。 - The elevation of the schottky barrier height after annealing causes the reduction of gate leakage and the more depletion of channel electrons, which also leads to the change of the saturation current and the threshold voltage.
退火后肖特基势垒高度提高，在减小栅泄漏电流的同时对沟道电子也有耗尽作用，这是饱和电流和阈值电压变化的主要原因。 - Its first theoretical calculation and analysis, sub-threshold current, threshold voltage, saturation current variation with temperature, and the Medici simulation verification.
先对其进行理论上的计算分析，得到亚阈值电流，阈值电压，饱和电流等随温度的变化关系，并用Medici模拟仿真进行验证。 - By only using synchronized voltage phasor, the fault location accuracy of this method is not affected by the saturation of current transformer.
该方法仅利用电压相量进行计算因而能够避免由电流互感器饱和所带来的误差影响。 - AlGaN/ GaN high electron mobility transistor ( HEMTs) is a kind of GaN device based on the AlGaN/ GaN heterojunction, and they own the outstanding performances of high transconductance, high output saturation current and high cutoff frequency.
AlGaN/GaN高电子迁移率晶体管（HEMTs）就是基于AlGaN/GaN异质结材料制造的GaN基器件，该类器件在高跨导、大饱和电流以及高截止频率方面有着很出色的表现。